Investigation of electrical properties of furnace grown gate oxide on strained-Si
| Autor: | J.G. Fiorenza, C. Leitz, Mayank T. Bulsara, H. Badawi, J. Carlin, Matthew T. Currie, N. Balasubramanian, T. Lochtefeld, G. Braithwaite, Shajan Mathew, L. K. Bera, Richard Hammond, T. A. Langdo, J. Yap, F. Singaporewala |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Silicon business.industry Gate dielectric Metals and Alloys Oxide chemistry.chemical_element Heterojunction Equivalent oxide thickness Time-dependent gate oxide breakdown Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Tunnel effect chemistry Gate oxide Materials Chemistry Optoelectronics business |
| Zdroj: | Thin Solid Films. :85-89 |
| ISSN: | 0040-6090 |
| Popis: | Effect of strained-Si thickness on electrical properties of furnace grown gate oxide has been investigated. Interface state density ( D it ) versus energy characteristics shows that D it increases with decreasing strained-Si thickness, probably due to the presence of Ge at the interface. From conductance measurement, two different types of traps are observed in the gate oxide. In thinner strained-Si samples, the onset of F–N tunneling happens at higher voltages, indicating thicker gate oxide. Gate voltage oscillations were observed during constant current stress under gate injection at low stress current. This sinusoidal characteristics are possibly due to the trapping and detrapping of charges in the oxide. |
| Databáze: | OpenAIRE |
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