Highly Selective Wet Silicon Etch Chemistry and Process for Advanced Semiconductor Packaging
| Autor: | John Clark, Sian Collins, John Taddei, Yongqiang Lu, Laura Mauer |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Tetramethylammonium hydroxide
Plasma etching Materials science Silicon business.industry chemistry.chemical_element chemistry.chemical_compound Etch pit density chemistry Automotive Engineering Polymer chemistry Optoelectronics Wafer Integrated circuit packaging business Buffered oxide etch Polyimide |
| Zdroj: | International Symposium on Microelectronics. 2016:000463-000468 |
| ISSN: | 2380-4505 |
| Popis: | A wet silicon etch chemistry and a process using the chemistry as a simple and cost-effective alternative to the polish/plasma etch silicon thinning process are presented in this paper. The new etch chemistry improves the Si etch rate over traditional etchants such as tetramethylammonium hydroxide (TMAH). The chemistry has very high silicon etch selectivity (ratio of Si etch rate to another film etch rate) over SiO2 and over copper films, with etch selectivity greater than 8000:1 and 2500:1 respectively. Chemical compatibility with typical packaging materials such as polybenzoxazole (PBO) and polyimide (PI) are also discussed. Additionally, real production TSV wafers have been successfully processed on an advanced single wafer etch tool using the chemistry. High uniformity and smooth surface finishing have been achieved. |
| Databáze: | OpenAIRE |
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