1-mW CW-RT monolithic VCSEL at 1.55 μm
Autor: | Christophe Starck, J. Boucart, Fabienne Gaborit, C. Fortin, Francois Brillouet, Antonina Plais, Leon Goldstein, N. Bouche, Estelle Derouin, D. Carpentier, Joel Jacquet, Paul Salet |
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Rok vydání: | 1999 |
Předmět: |
Materials science
business.industry Substrate (electronics) Laser Distributed Bragg reflector Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Vertical-cavity surface-emitting laser Semiconductor laser theory Optics Distributed Bragg reflector laser law Tunnel junction Optoelectronics Electrical and Electronic Engineering business Molecular beam epitaxy |
Zdroj: | IEEE Photonics Technology Letters. 11:629-631 |
ISSN: | 1941-0174 1041-1135 |
DOI: | 10.1109/68.766766 |
Popis: | In this letter, we demonstrate the first result of a high-power (1 mW) continuous-wave room-temperature vertical-cavity surface-emitting laser emitting at 1.55 /spl mu/m using a single InP substrate. The whole structure was grown monolithically using gas source molecular beam epitaxy and incorporates two original approaches. The first originality consists in the growth of a metamorphic GaAs-AlAs Bragg mirror directly on an InP-based cavity. The second novel idea is to use a tunnel junction for current injection. Moreover by using these two approaches the processing is very simple and, therefore, fulfills the goal for low-cost laser production in access and interconnections applications. |
Databáze: | OpenAIRE |
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