1-mW CW-RT monolithic VCSEL at 1.55 μm

Autor: Christophe Starck, J. Boucart, Fabienne Gaborit, C. Fortin, Francois Brillouet, Antonina Plais, Leon Goldstein, N. Bouche, Estelle Derouin, D. Carpentier, Joel Jacquet, Paul Salet
Rok vydání: 1999
Předmět:
Zdroj: IEEE Photonics Technology Letters. 11:629-631
ISSN: 1941-0174
1041-1135
DOI: 10.1109/68.766766
Popis: In this letter, we demonstrate the first result of a high-power (1 mW) continuous-wave room-temperature vertical-cavity surface-emitting laser emitting at 1.55 /spl mu/m using a single InP substrate. The whole structure was grown monolithically using gas source molecular beam epitaxy and incorporates two original approaches. The first originality consists in the growth of a metamorphic GaAs-AlAs Bragg mirror directly on an InP-based cavity. The second novel idea is to use a tunnel junction for current injection. Moreover by using these two approaches the processing is very simple and, therefore, fulfills the goal for low-cost laser production in access and interconnections applications.
Databáze: OpenAIRE