Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates
| Autor: | V. I. Kuchinskii, M. P. Scheglov, T. B. Popova, D. Yu. Kazantsev, A. S. Vlasov, R. V. Levin, B. Ya. Ber, V. I. Vasil’ev, G. S. Gagis, D. V. Chistyakov, A. E. Marichev |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence Physics and Astronomy (miscellaneous) Pl spectra Analytical chemistry Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Spectral line Impurity 0103 physical sciences Composition (visual arts) 0210 nano-technology Luminescence Solid solution |
| Zdroj: | Technical Physics Letters. 45:1031-1034 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/s1063785019100213 |
| Popis: | Luminescence properties of epilayers of Ga1 –xInxAsyP1 –y (GaInAsP) solid solutions with graded content of Group V elements (Δy up to 0.08 over a total thickness of about 1 μm) were studied at 77 and 300 K. The photoluminescence (PL) spectra of GaInAsP epilayers with large Δy values were broadened. The GaInAsP epilayers of low crystalline perfection exhibited either no PL emission or showed PL spectra characteristic of transitions involving impurity energy levels. |
| Databáze: | OpenAIRE |
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