Enhanced Magnetodielectric Response in c-Axis AlN Based Magnetoelectric Multilayer Encapsulating a Highly Magnetostrictive Thin Film
| Autor: | Davinder Kaur, Shuvam Pawar, Anuj Kumar, Jitendra Singh |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Piezoelectric coefficient Materials science Magnetostriction 02 engineering and technology Dielectric Sputter deposition 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Piezoelectricity Electronic Optical and Magnetic Materials Ferromagnetism Sputtering 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Composite material Thin film 0210 nano-technology |
| Zdroj: | Journal of Electronic Materials. 49:4653-4658 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | In this work, a lead-free magnetoelectric composite with a NiMnIn (180 nm)/AlN (180 nm)/NiMnIn (50 nm)/AlN (180 nm)/NiMnIn (180 nm) structure has been fabricated using magnetron sputtering. The AlN structure with an encapsulated NiMnIn layer exhibits higher dielectric permittivity, piezoelectric response and magnetodielectric response as compared to a pure AlN (∼ 360 nm) structure. The dielectric constant of the encapsulated structure was found to be about 300% (22.3) greater as compared to that of the pure AlN (∼ 7.24) structure. The piezoelectric coefficient of the multilayered structure was found to be about 7.49. A high value (∼ 1268 ppm) of the magnetostriction coefficient was obtained for the ferromagnetic NiMnIn layer using the cantilever deflection method. The magnetic field sensing characteristics of the fabricated encapsulated structure is studied in terms of magnetodielectric effect as large as 8.5%. The proposed multilayered structures with enhanced dielectric constant and good magnetodielectric characteristics are useful for future magnetic field sensing and microelectromechanical systems device applications. |
| Databáze: | OpenAIRE |
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