Deformation of silicon at low temperatures
| Autor: | D. J. Rowcliffe, M. J. Hill |
|---|---|
| Rok vydání: | 1974 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Mechanical Engineering chemistry.chemical_element Slip (materials science) Indentation hardness Crystallography chemistry Mechanics of Materials Transmission electron microscopy Indentation Solid mechanics General Materials Science Composite material Dislocation |
| Zdroj: | Journal of Materials Science. 9:1569-1576 |
| ISSN: | 1573-4803 0022-2461 |
| DOI: | 10.1007/bf00540753 |
| Popis: | The dislocation arrangements produced around microhardness indentations made in silicon at room temperature have been studied by transmission electron microscopy. Loops consisting of 30°- and 60°-dislocations are produced and move on the {111} planes. It is suggested that, during indentation, the theoretical shear strength is exceeded locally and that the observed dislocations arise as a result of the accommodation of the displacements due to block slip. On annealing up to 1030° C the loops do not appear to be mobile, rather new loops consisting of edge and screw components are formed which can move large distances. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink