0.3 V supply, 17 ppm/°C 3-transistor picowatt voltage reference
| Autor: | Sergio Bampi, Jhon Alexander Gomez Caicedo, Arthur Campos de Oliveira, Hamilton Klimach |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Bandgap voltage reference business.industry Subthreshold conduction 020208 electrical & electronic engineering Transistor Electrical engineering 02 engineering and technology Overdrive voltage 020202 computer hardware & architecture law.invention Threshold voltage law MOSFET 0202 electrical engineering electronic engineering information engineering Optoelectronics business Temperature coefficient Voltage reference |
| Zdroj: | LASCAS |
| Popis: | In this work a novel resistorless MOSFET 3-transistor voltage reference that operates in the picowatt range and occupies very small area is proposed. The circuit is based on a self-cascode structure that is biased in subthreshold condition using the leakage current provided by a reverse biased MOSFET diode. Its electrical behavior is analytically described and a design methodology is presented to allow the transistors sizing for optimal temperature compensation. Simulation results for a standard 130 nm CMOS process are presented to validated the proposed circuit topology. A reference voltage of 85 mV is obtained with a temperature coefficient (TC) of 17.4 ppm/°C and consuming only 7 pW under 0.3 V of power supply at room temperature. Monte Carlo analysis shows that the reference voltage σ/μ< 3.3% and that 90% of the samples present TC |
| Databáze: | OpenAIRE |
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