Structural, optical, and electrical characterization of improved amorphous hydrogenated germanium
| Autor: | William Paul, J. Bodart, W. A. Turner, Y.M. Li, M. L. Thèye, A. E. Wetsel, Francisco C. Marques, B. F. Bateman, D. Pang, S. J. Jones, Paul Wickboldt, R. E. Norberg, J. H. Chen, I. El Zawawi |
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| Rok vydání: | 1990 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 67:7430-7438 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.344533 |
| Popis: | High‐quality amorphous hydrogenated germanium has been deposited using the diode rf glow discharge method out of a gas plasma of GeH4 and H2. The optical, electrical, and structural properties of this material have been extensively characterized. The optical and electrical properties are all consistent with material containing a low density of defect related states in the energy gap. In particular, this material has an ημτ=3.2×10−7 cm2/V, ratio of photocurrent to dark current of 1.3×10−1, and flux dependence of the photocurrent with γ=0.79 at 1.25 eV measured using photoconductivity, a μτ=4×10−8 cm2/V measured using time of flight, an Urbach energy of 51 meV and α at 0.7 eV of 8.3 cm−1 measured using photothermal deflection spectroscopy, a dangling bond spin density of 5×1016 cm−3 measured using electron spin resonance, photoluminescence with a peak energy position of 0.81 eV and full width at half maximum of 0.19 eV, an activation energy of 0.52 eV and σ0 of 6.1×103 (Ω cm)−1 measured using dark conductiv... |
| Databáze: | OpenAIRE |
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