| Autor: |
Goichi Ono, Michiaki Nakayama, Misa Owa, Yusuke Kanno |
| Rok vydání: |
2012 |
| Předmět: |
|
| Zdroj: |
2012 IEEE Asian Solid State Circuits Conference (A-SSCC). |
| DOI: |
10.1109/ipec.2012.6522639 |
| Popis: |
A fully digital 40-nm-CMOS-based sensor using dual-ring oscillators for detecting random device fluctuation was developed. The sensor detects threshold voltage fluctuation of a MOSFET with precision of 1 mV with ±10% accuracy by calculating the squared sum of the differences in frequencies of the two ring oscillators. This sensing method does not require reference signals and achieves a smaller layout area than that of a conventional analog sensor. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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