Heteroepitaxy of In2O3Whiskers Fabricated on Single Crystalline (001) Yittrium Stabilized Zirconia

Autor:	Hidetoshi Saitoh, Hironori Sugata, Shigeo Ohshio
Rok vydání:	2003
Předmět:	Materials science Physics and Astronomy (miscellaneous) Monocrystalline whisker Whiskers General Engineering General Physics and Astronomy Crystal growth Nanotechnology Substrate (electronics) Dendrite (crystal) Whisker Cubic zirconia Composite material Yttria-stabilized zirconia
Zdroj:	Japanese Journal of Applied Physics. 42:2786-2790
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.42.2786
Popis:	A chemical-vapor-deposition method operated under atmospheric pressure is available for crystal growth showing morphological instabilities. A highly supersaturating condition that is favorable for the growth of elegant ZnO whiskers promotes the growth of In2O3 whiskers. The In2O3 whiskers grew perpendicularly to the single crystalline substrate of yttria stabilized zirconia (YSZ). The heteroepitaxial relationship between the whiskers and the YSZ substrate is determined as In2O3[100](001) ∥ YSZ[100](001). The full-width at half maximum value of the (400) reflection of the In2O3 whisker was also determined to be 0.23° on the rocking curve.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a0cbe9c675a02adbd746fa80ccb7558b https://doi.org/10.1143/jjap.42.2786 Zobrazit plný text záznamu