Ultra-Shallow junctions in silicon using amorphous and polycrystalline silicon solid diffusion sources
| Autor: | Shubneesh Batra, G. Lux, Sanjay K. Banerjee, K. Park |
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| Rok vydání: | 1991 |
| Předmět: |
Amorphous silicon
Materials science Silicon Polysilicon depletion effect Doping Nanocrystalline silicon chemistry.chemical_element engineering.material Condensed Matter Physics Electronic Optical and Magnetic Materials Amorphous solid chemistry.chemical_compound Polycrystalline silicon chemistry Materials Chemistry engineering Grain boundary Electrical and Electronic Engineering Composite material |
| Zdroj: | Journal of Electronic Materials. 20:261-265 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02651902 |
| Popis: | The inter-dependence of diffusion behavior and grain microstructure in amorphous silicon/polysilicon-on-single crystal silicon systems has been studied for rapid thermal and furnace annealing for P and BF2 implants. It is found that the changes of microstructure during annealing play a major role in determining the diffusion profiles in the substrate as well as in the polysilicon layer. For P doping, a drive-in diffusion results in a much larger grain microstructure for as-deposited amorphous silicon than for as-deposited polysilicon, which leads to the formation of shallower junctions in the substrate for the first case. For B doping, there is little difference in the final microstructure and junction depth between the two cases. The P and B junctions formed in the substrate are found to be laterally very uniform in spite of expected doping inhomogeneities due to polysilicon grain boundaries both for as-deposited amorphous silicon diffusion sources and for as-deposited polysilicon diffusion sources. |
| Databáze: | OpenAIRE |
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