A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching
| Autor: | Jim Richmond, Q. Jon Zhang, Craig Capell, Mrinal K. Das, Matthew Donofrio, Fatima Husna, Charlotte Jonas, Jack Clayton, Robert Callanan, Sarah K. Haney, Joseph John Sumakeris |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Materials science
business.industry Blocking (radio) Mechanical Engineering Oxide Electrical engineering Insulated-gate bipolar transistor Condensed Matter Physics Power (physics) chemistry.chemical_compound chemistry Mechanics of Materials MOSFET Limit (music) Optoelectronics General Materials Science Power semiconductor device business Temperature coefficient |
| Zdroj: | Materials Science Forum. :1183-1186 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.600-603.1183 |
| Popis: | For the first time, high power 4H-SiC n-IGBTs have been demonstrated with 13 kV blocking and a low Rdiff,on of 22 mWcm2 which surpasses the 4H-SiC material limit for unipolar devices. Normally-off operation and >10 kV blocking is maintained up to 200oC base plate temperature. The on-state resistance has a slight positive temperature coefficient which makes the n-IGBT attractive for parallel configurations. MOS characterization reveals a low net positive fixed charge density in the oxide and a low interface trap density near the conduction band which produces a 3 V threshold and a peak channel mobility of 18 cm2/Vs in the lateral MOSFET test structure. Finally, encouraging device yields of 64% in the on-state and 27% in the blocking indicate that the 4H-SiC n-IGBT may eventually become a viable power device technology. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|