Impact of in situ Plasma Enhanced Atomic Layer Deposition on the Electrical Properties of HfO2/In0.53Ga0.47As MOSCAPs for Low EOT and Low Interface State Densit
| Autor: | Q.H. Luc, S.H. Huynh, E.Y. Chang, J.H. Chen, Y.C. Lin, P.C. Chang, H.B. Do, S.P. Cheng |
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| Rok vydání: | 2015 |
| Předmět: | |
| Zdroj: | Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials. |
| DOI: | 10.7567/ssdm.2015.ps-1-2 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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