Novel Bi-directional tunneling program/erase NOR (BiNOR) type flash EEPROM

Autor:	Tien-Sheng Chao, Cheng-Jye Liu, Hsu Chia-Jung, Evans Ching-Song Yang, Ming-Chi Liaw
Rok vydání:	2003
Předmět:	business.industry Computer science NAND gate Flash memory law.invention Flash (photography) law Low-power electronics Charge trap flash Electronic engineering Optoelectronics business Quantum tunnelling EEPROM Communication channel
Zdroj:	1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453).
DOI:	10.1109/vtsa.1999.786036
Popis:	This paper presents a novel Bi-directional channel FN tunneling program/erase NOR (BiNOR) type flash memory cell for the reliable, high speed, and low power operation. With the localized shallow p-well at bit-line, BiNOR realizes low power channel FN tunneling program/erase in a NOR-type array architecture, which could only be done previously in a NAND array architecture. Furthermore, the read current is enhanced greatly by the 3-D conduction effect due to the designated shallow p-well.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a09fa7ab70e7236b3179114f9a0ad62a https://doi.org/10.1109/vtsa.1999.786036 Zobrazit plný text záznamu