Etchant for chemical thinning of InP and its application in the fabrication of InP diffused junction solar cells

Autor:	Mircea Faur, Douglas Jayne, Maria Faur, M. Goradia, Sheila G. Bailey
Rok vydání:	1994
Předmět:	Fabrication Thinning business.industry Chemistry Analytical chemistry Surfaces and Interfaces General Chemistry Condensed Matter Physics Thermal diffusivity Surfaces Coatings and Films Optics Materials Chemistry Specular reflection business Layer (electronics) Common emitter
Zdroj:	Surface and Interface Analysis. 21:110-116
ISSN:	1096-9918 0142-2421
Popis:	A new etchant, which we have called PNP, with the composition (o-H 3 PO 4 ) u :(HNO 3 ) υ :(H 2 O 2 ) t :(H 2 O) 100-(u+υt) has been developed for thinning, after contacting, the n + and p + emitter layer of n + p and p + n InP structures made by thermal diffusion. By varying u, υ and t, reproducible etch rates of 5-110 nm min -1 have been obtained. After thinning the 2.5-4.5 μm thick p + InP layer down to 60-250 nm, specular surfaces have been obtained at up to 80 nm min -1 etch rates
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a091794c9a38de0399d22e107b433bcf https://doi.org/10.1002/sia.740210208 Zobrazit plný text záznamu Plný text