Molecular Design of o-Nitrobenzyl Phenol Ether for Photo-deprotection Resist; Challenge to half-pitch 22nm using Near-field Lithography

Autor:	Akira Terao, Takako Yamaguchi, Yasuhisa Inao, Toshiki Ito, Natsuhiko Mizutani
Rok vydání:	2007
Předmět:	Materials science Polymers and Plastics Stereochemistry Organic Chemistry Analytical chemistry Ether Near and far field Line edge roughness law.invention chemistry.chemical_compound Resist Photosensitivity chemistry law Materials Chemistry Phenol Photolithography Lithography
Zdroj:	Journal of Photopolymer Science and Technology. 20:591-598
ISSN:	1349-6336 0914-9244
DOI:	10.2494/photopolymer.20.591
Popis:	Polyhydroxystyrenes protected with three kinds of o-nitrobenzyl (NB) group are synthesized: 4,5- dimethoxy NB group (DNB), 4- monomethoxy NB group (MNB) and $alpha;-methyl 4,5- dimethoxy NB group (ADNB). Their solutions are formulated as photo-deprotection resists for the near-field lithography (NFL). These resists are evaluated in terms of the fundamental lithographic performances using the propagation i-line light, followed by the NFL experiments. The ADNB has the highest photosensitivity and the DNB provides the resist patterns of the smallest line edge roughness (LER). Hp 22 nm L/S pattern of 10 nm deep is fabricated on the top portion of a single-layer of DNB. Hp 32 nm L/S pattern of 10 nm thick is transferred to the 100 nm thick bottom-layer resist through the tri-layer resist process.
Databáze:	OpenAIRE
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