The effect of ion implantation energy and dosage on the microstructure of the ion beam synthesized FeSi2 in Si

Autor:	S.P. Wong, Quan Li, C.F. Chow, N. Ke, Y.T. Chong, Kevin P. Homewood, W.Y. Cheung
Rok vydání:	2005
Předmět:	Materials science Ion beam Ion beam mixing Mechanical Engineering Analytical chemistry Condensed Matter Physics Microstructure Ion Ion implantation Mechanics of Materials Lattice (order) General Materials Science Luminescence Coherence (physics)
Zdroj:	Materials Science and Engineering: B. :444-448
ISSN:	0921-5107
Popis:	Nanometer-sized β-FeSi 2 precipitates are formed in Si by ion beam synthesis (IBS). A systematic study is carried out to investigate the correlation among the implantation parameters, the microstructure, and the luminescence properties. On the one hand, we found additional orientation relationships (ORs) appear between the β-FeSi 2 and the Si with improved lattice coherence between the two, when the ion implantation energy is increased. On the other hand, the degree of preferential orientation deteriorates and leads to poor lattice coherence between the particles and Si matrix when the iron ion is overdosed. These microstructure changes lead to different luminescence properties (intensity, peak position and shape) of the β-FeSi 2 particles accordingly.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a08bff4faaf43f49e490376af9ee1ddc https://doi.org/10.1016/j.mseb.2005.08.042 Zobrazit plný text záznamu Full Text from ScienceDirect