Effect of thin V insertion layer into Ta film on the performance of Ta diffusion barrier in Cu metallization
| Autor: | Hyuk Ju Ryu, Jong-Hoon Kim, Joon Seop Kwak, Jung Ho Je, Sung-Man Lee, Hong Koo Baik |
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| Rok vydání: | 1999 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 85:6898-6903 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.370209 |
| Popis: | In order to increase the failure temperature of Ta diffusion barrier for Cu, we investigated the effect of a thin V insertion layer (100 A) into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization. When the Ta/V/Ta diffusion barrier was deposited without concurrent ion bombardment, the insertion of the thin V layer into Ta film was not effective to improve the barrier performance of Ta film, because of the thermal instability of the Ta/V/Ta multilayer caused by the reaction between the Ta/V/Ta films and Si substrate. Meanwhile, when the Ta/V/Ta diffusion barrier was deposited with ion bombardment, the insertion of the thin V layer into Ta film improved barrier properties significantly. This was attributed not only to the densification of grain boundaries in Ta/V/Ta films, but also to the formation of two thermally stable sharp interfaces between Ta and V by ion bombardment, resulting in the reduction of the fast diffusion of Cu through Ta/V/Ta films. |
| Databáze: | OpenAIRE |
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