Defect distribution in ZnO thin films grown on a-plane sapphire substrates by catalytic-reaction-assisted chemical vapor deposition

Autor:	Kanji Yasui, Taro Saito, Ariyuki Kato
Rok vydání:	2021
Předmět:	Electron mobility Materials science Dimethylzinc Analytical chemistry Chemical vapor deposition Condensed Matter Physics Inorganic Chemistry Full width at half maximum chemistry.chemical_compound chemistry Transmission electron microscopy Materials Chemistry Sapphire Thin film Dislocation
Zdroj:	Journal of Crystal Growth. 570:126206
ISSN:	0022-0248
Popis:	This work examined the crystalline structure of a ZnO thin film grown on an a-plane sapphire substrate through a reaction between dimethylzinc and high-energy H2O molecules produced by the Pt-catalysed reaction of gaseous H2 and O2. The dislocation distribution in a ZnO film with a thickness of 5 μm grown on an a-plane sapphire substrate was observed using cross-sectional dual-beam transmission electron microscopy, and the dislocation density was evaluated by Ham’s method. A much higher dislocation density was found at the film-substrate interface than at the film surface. The influences of film thickness on the full width at half maximum of the X-ray diffraction rocking curve and on the electron mobility are both attributed to this localized high density of defects.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a07e3f331022f82497d090dc7545b7ff https://doi.org/10.1016/j.jcrysgro.2021.126206 Zobrazit plný text záznamu Full Text from ScienceDirect