Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence
| Autor: | A. Bärwolff, Jens W. Tomm, T. Günther, Markus Weyers, V. Malyarchuk, Eberhard Richter, Ch. Lienau, S. Gramlich, Andre Maaßdorf, Frank Brunner, D. Nickel, G. Trankle, Thomas Elsaesser, Yu. I. Mazur |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
Photoluminescence Auger effect business.industry Band gap Bipolar junction transistor General Physics and Astronomy Heterojunction Carrier lifetime Condensed Matter::Materials Science symbols.namesake symbols Optoelectronics Photoluminescence excitation Spontaneous emission business |
| Zdroj: | Journal of Applied Physics. 91:5072-5078 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1456244 |
| Popis: | Room-temperature photoluminescence decay time measurements in heavily doped GaAs:C-layers designed as base layers for heterojunction bipolar transistors are reported. These measurements provide access to nonequilibrium minority carrier lifetimes that determine the current gains of those devices. By systematically studying transient luminescence spectra over a wide range of excitation densities between 1013 and 1018 cm−3, we demonstrate the importance of carrier trapping processes at low excitation densities. Optimized excitation conditions that achieve trap saturation but also avoid stimulated emission are found for densities of (1–3)×1017 cm−3/pulse. Detection is limited to a spectral window well above the energy gap (beyond 1.5 eV). Values for both Auger and radiative recombination coefficients are given. |
| Databáze: | OpenAIRE |
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