Early Voltage Behavior in Circular Gate SOI nMOSFET Using 0.13 μm Partially-Depleted SOI CMOS Technology

Autor:	Joao Antonio Martino, Rodrigo M. Ferreira, Salvador Pinillos Gimenez
Rok vydání:	2007
Předmět:	Materials science Soi cmos technology business.industry Silicon on insulator Optoelectronics Drain current business Voltage Communication channel
Zdroj:	ECS Transactions. 4:309-318
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.2813504
Popis:	This paper studies the Early voltage behavior in circular gate partiallydepleted SOI nMOSFET. The drain/source asymmetric effects are considered in terms of drain current as a function of the gate and drain voltages. Drain current comparisons with rectangular gate partiallydepleted SOI nMOSFET are performed, regarding the same effective channel length and width. Experimental results and three- dimensional simulations are used to qualify the results.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a06dbb838b566b18888ffff2da387979 https://doi.org/10.1149/1.2813504 Zobrazit plný text záznamu