Oxygen accumulation effect for depth profiling of thin-multilayered sample using low-energy oxygen ion beam
| Autor: | Hisataka Takenaka, Suguru Nishinomiya, Naoyoshi Kubota, Hayashi Shunichi |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Resonance-enhanced multiphoton ionization
Analytical chemistry chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Mass spectrometry Oxygen Surfaces Coatings and Films Ion Secondary ion mass spectrometry chemistry Sputtering Ionization Materials Chemistry Irradiation Atomic physics |
| Zdroj: | Surface and Interface Analysis. 45:107-110 |
| ISSN: | 0142-2421 |
| DOI: | 10.1002/sia.5107 |
| Popis: | This paper tries to discuss the change of the secondary ion yield, sputtered neutrals yield and the change of the internal energy of sputtered neutrals with O2+ beam bombardment. For this discussion, we researched the influence of the accumulation effect with O2+ beam bombardment by using the secondary ion mass spectrometry (SIMS) and the resonance-enhanced multiphoton ionization sputtered neutral mass spectrometry (REMPI-SNMS). In order to reveal the influence of different oxygen implantation depth, we used O2+ beam of 0.5, 1.0 and 2.0 keV and compared the amounts of secondary ions and sputtered neutrals for the nano-multilayered samples. The results of the SIMS and SNMS measurement indicated that the accumulation effect depends on irradiation energy of O2+ beam because the surface oxygen concentration, which greatly affects secondary ion yield and sputtering neutrals yield, changed for different irradiation energies. In conclusion, it was found that the secondary ion yield, the sputtered neutrals yield and internal energy of sputtered neutrals were significantly changed by oxidation of the matrix elements. Copyright © 2012 John Wiley & Sons, Ltd. |
| Databáze: | OpenAIRE |
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