Thermodynamic modeling of SiBCN film deposition from the gas phase in the Si—B—N—C—H system
| Autor: | V. A. Shestakov, Marina Kosinova |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Silicon
010405 organic chemistry chemistry.chemical_element General Chemistry Chemical vapor deposition Borane 010402 general chemistry 01 natural sciences 0104 chemical sciences chemistry.chemical_compound chemistry Phase (matter) Deposition (phase transition) Physical chemistry Boron Hexamethyldisilane Tetramethylsilane |
| Zdroj: | Russian Chemical Bulletin. 70:283-288 |
| ISSN: | 1573-9171 1066-5285 |
| DOI: | 10.1007/s11172-021-3083-9 |
| Popis: | Thermodynamic modeling of the chemical vapor deposition (CVD) of films of complex composition in the Si—B—N—C—H system under reduced pressure (0.01 or 10 Torr) in a wide temperature range of 500–1500 K using various organoelement compounds was carried out. An example with mixtures of tetramethylsilane SiMe4 and hexamethyldisilane (SiMe3)2 with trimethylamine borane Me3N · BH3 or triethylamine borane Et3N · BH3 illustrates a possibility to produce films of various compositions: from boron and silicon nitrides to their mixtures with carbides and/or carbon. According to the CVD diagrams, the prevailing equilibrium condensed phases are various phase complexes containing SiC, Si3N4, BN, and C. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink