A high-performance SiGe-Si multiple-quantum-well heterojunction phototransistor

Autor:	Y.T. Tseng, Chen Peng-Shiu, Y.-M. Hsu, C.S. Liang, Ming-Jinn Tsai, S.C. Lu, Zingway Pei, Chee-Wee Liu, Li-Shyue Lai
Rok vydání:	2003
Předmět:	Materials science business.industry Bipolar junction transistor Heterojunction Integrated circuit Cutoff frequency Electronic Optical and Magnetic Materials law.invention Photodiode Responsivity Wavelength law Optoelectronics Quantum efficiency Electrical and Electronic Engineering business
Zdroj:	IEEE Electron Device Letters. 24:643-645
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2003.817870
Popis:	A novel phototransistor is fabricated by placing Si/sub 0.5/Ge/sub 0.5//Si multiple quantum wells (MQWs) between the base and the collector of Si-SiGe heterojunction bipolar transistors (HPT). The SiGe-Si MQWs are used as a light absorption layer. The cutoff frequency (f/sub T/) and maximum oscillation frequency (f/sub MAX/) of the phototransistor are found to be 25 GHz, which is suitable for gigabit integrated circuit. The responsivity of 1.3 A/W (external quantum efficiency = 194%) and the pulsewidth of 184 ps at a wavelength of 850 nm are observed. The excellent electrical and optical performance of the Si-SiGe MQW phototransistor makes it attractive for future Si-based optoelectronic integrated circuit applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a05b6b13326accbf39ac8db1ea627634 https://doi.org/10.1109/led.2003.817870 Zobrazit plný text záznamu