Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation

Autor:	S. C. Wu, H.H. Hsieh, Ji-Jung Kai, D.C. Yan, C.Y. Cheng, Cheng-Chung Chi, H. Niu, C.H. Chen
Rok vydání:	2009
Předmět:	Magnetization Ion implantation Materials science Ferromagnetism Condensed matter physics Transmission electron microscopy Annealing (metallurgy) Analytical chemistry Curie temperature Magnetic semiconductor Thin film Condensed Matter Physics Electronic Optical and Magnetic Materials
Zdroj:	Journal of Magnetism and Magnetic Materials. 321:1130-1132
ISSN:	0304-8853
DOI:	10.1016/j.jmmm.2008.10.042
Popis:	Using Mn + implantation following ion beam-induced epitaxial crystallization (IBIEC) annealing, high Curie temperature ferromagnetic (Ga,Mn)As thin film was fabricated. The crystalline quality of the Mn + implanted layer was identified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). A clear ferromagnetic transition at T c 253 K was observed by magnetization vs. temperature measurement. We infer that IBIEC treatment is a useful method not only for the low-temperature annealing of (Ga,Mn)As thin films but also for other dilute magnetic semiconductor (DMS) samples.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a052dc4d8a5a0157f4942d4bcdfa4e85 https://doi.org/10.1016/j.jmmm.2008.10.042 Zobrazit plný text záznamu Full Text from ScienceDirect