Low Temperature Characteristics of Ion Implanted Silicon Position Sensitive Detectors
| Autor: | R. A. Sareen, E. Elad |
|---|---|
| Rok vydání: | 1974 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon Physics::Instrumentation and Detectors business.industry Detector chemistry.chemical_element Particle detector Ion law.invention Ion implantation Nuclear Energy and Engineering chemistry law Optoelectronics Electrical and Electronic Engineering Resistor business Boron Noise (radio) |
| Zdroj: | IEEE Transactions on Nuclear Science. 21:75-84 |
| ISSN: | 0018-9499 |
| DOI: | 10.1109/tns.1974.4327447 |
| Popis: | The operation of ion implanted silicon position sensitive detectors at low temperatures will be described. The improved noise performance of the detector at these temperatures in both the energy and position modes will be analyzed and its implications on low energy applications will be discussed. A large part of the investigation was devoted to the study of boron implanted resistors and their noise properties both at room temperature and cryogenic temperatures. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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