Simulation of trapping properties of high κ material as the charge storage layer for flash memory application
| Autor: | Won Jong Yoo, S. K. Samanta, Yee Ngee Yeo, Dongyue Gao, Ganesh S. Samudra, Chee Ching Chong, Ying Qian Wang |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
business.industry
Chemistry Metals and Alloys Surfaces and Interfaces Flash memory Surfaces Coatings and Films Electronic Optical and Magnetic Materials Threshold voltage Non-volatile memory Field electron emission Tunnel effect Materials Chemistry Optoelectronics Silicon oxide business Voltage High-κ dielectric |
| Zdroj: | Thin Solid Films. 504:209-212 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2005.09.126 |
| Popis: | We investigated the trapping properties of high κ material as the charge storage layer in non-volatile flash memory devices using a two-dimensional device simulator, Medici. The high κ material is sandwiched between two silicon oxide layers, resulting in the Silicon-Oxide-High κ-Oxide-Silicon (SOHOS) structure. The trap energy levels of the bulk electron traps in high κ material were determined. The programming and erasing voltage and time using Fowler Nordheim tunneling were estimated by simulation. The effect of deep level traps on erasing was investigated. Also, the effect of bulk traps density, thickness of block oxide and thickness of high κ material on the threshold voltage of the device was simulated. |
| Databáze: | OpenAIRE |
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