| Autor: |
Albert A. Burk, Adrian Powell, Michael J. O'Loughlin, Scott Ustin, Denis Tsvetkov, Jeff Seaman, N. Partin, Lara Garrett |
| Rok vydání: |
2014 |
| Předmět: |
|
| Zdroj: |
Materials Science Forum. :113-116 |
| ISSN: |
1662-9752 |
| Popis: |
Latest results are presented for SiC-epitaxial growths employing a novel 6x150-mm/10x100-mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor. The increased throughput offered by this reactor and 150-mm diameter wafers, is intended to reduce the cost per unit area for SiC epitaxial layers, increasing the market penetration of already successful commercial SiC Schottky and MOSFET devices [1]. Increased growth rates of 30-40 micron/hr and short -2, consistent with projected 5x5 mm die yields averaging 93% for Si-face epitaxial layers between 10 and 30 microns thick. Intrawafer thickness and doping uniformity are good, averaging 1.7% and 5.1% respectively. Wafer-to-wafer doping variation has also been significantly reduced from ~12 [5] to |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
