Comparison of two analog buffers implemented with low‐temperature polysilicon thin‐film transistors for active matrix displays applications

Autor:	Ilias Pappas, Stilianos Siskos, C.A. Dimitriadis, Gerard Ghibaudo
Rok vydání:	2008
Předmět:	Materials science law business.industry Thin-film transistor Transistor Optoelectronics Condensed Matter Physics business Active matrix law.invention Threshold voltage
Zdroj:	physica status solidi c. 5:3854-3857
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.200780142
Popis:	In this paper a comparison in the performance of two analog buffers for Active Matrix Displays (AMDs) applications is presented. The two buffers are implemented by using low-temperature polysilicon thin-film transistors (LT poly-Si TFTs) presenting high immunity to the threshold voltage variations of the TFTs devices. The verification of their functionality and performance was made through simulation with Synopsys HSpice. In order the simulations to be realistic and the performance as close to reality as possible, parameters extraction was made from fabricated LT poly-Si TFTs. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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