A 23 GHz low power VCO in SiGe BiCMOS technology
| Autor: | Jin Zhi, Wu Danyu, Jiang Fan, Zhou Lei, Wu Jin, Huang Yinkun |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Heterojunction bipolar transistor Bipolar junction transistor Electrical engineering dBc Condensed Matter Physics Inductor Electronic Optical and Magnetic Materials Voltage-controlled oscillator Phase noise Materials Chemistry RFIC Electrical and Electronic Engineering business Varicap |
| Zdroj: | Journal of Semiconductors. 34:045003 |
| ISSN: | 1674-4926 |
| DOI: | 10.1088/1674-4926/34/4/045003 |
| Popis: | A 23 GHz voltage controlled oscillator (VCO) with very low power consumption is presented. This paper presents the design and measurement of an integrated millimeter wave VCO. This VCO employs an on-chip inductor and MOS varactor to form a high Q resonator. The VCO RFIC was implemented in a 0.18 μm 120 GHz ft SiGe hetero-junction bipolar transistor (HBT) BiCMOS technology. The VCO oscillation frequency is around 23 GHz, targeting at the ultra wideband (UWB) and short range radar applications. The core of the VCO circuit consumes 1 mA current from a 2.5 V power supply and the VCO phase noise was measured at around −94 dBc/Hz at a 1 MHz frequency offset. The FOM of the VCO is −177 dBc/Hz. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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