Flexible Cu(In,Ga)Se2 Solar Cells with In2S3 Buffer Layer
| Autor: | Verma, R., Chirila, A., Güttler, D., Perrenoud, J., Buecheler, S., Seyrling, S., Mandaliev, P., Weidenkaff, A., Tiwari, A.N. |
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| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: | |
| DOI: | 10.4229/24theupvsec2009-3do.4.1 |
| Popis: | 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 2421-2424 Properties of In2S3 buffer layers, deposited by two modifications of a physical vapor deposition method, slow rate (thermal evaporation) and fast rate (flash evaporation) of deposition, are compared for Cu(In,Ga)Se2 (CIGS) solar cells. The optical band gaps of In2S3 layers are 2.53 eV and 2.7 eV for layers grown with thermal and flash evaporation methods, respectively. Post–deposition annealing caused an increase in the band gap. The as-grown amorphous layer crystallized in -In2S3 phase after annealed in air at 200°C. A continuous and uniform morphology of In2S3 layer on rough CIGS was observed. In case of thermally grown In2S3 buffer on CIGS layer deposited on Mo coated polyimide substrate, the presence of an intermediate layer between In2S3 and CIGS was observed. This intermediate residual layer formed due to NaF residues in post-deposition of CIGS layer plays a critical role in achieving high efficiency solar cells. 14.4% and 10.1% efficient solar cells on glass and polyimide, respectively, have been developed with vacuum evaporated In2S3 buffer layers. |
| Databáze: | OpenAIRE |
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