Metal-Gate, Schottky-Source/Drain SOI-MOSFET for Complementary Integration

Autor:	Ken Matsuura, Ryo Tanabe, Minoru Fujishima, Koichiro Hoh, Tetsuya Fukuoka
Rok vydání:	2001
Předmět:	Materials science business.industry MOSFET Schottky diode Optoelectronics Silicon on insulator Electrical and Electronic Engineering business Metal gate
Zdroj:	IEEJ Transactions on Electronics, Information and Systems. 121:499-508
ISSN:	1348-8155 0385-4221
DOI:	10.1541/ieejeiss1987.121.3_499
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9ff5232af2115c6b106ff6b50bfff380 https://doi.org/10.1541/ieejeiss1987.121.3_499 Zobrazit plný text záznamu