| Autor: |
Zoya Popovic, Parisa Momenroodaki, Andrew Zai, Mike Coffey |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). |
| DOI: |
10.1109/csics.2015.7314469 |
| Popis: |
This paper describes the design and performance of an X-band GaN monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) in a 0.15 µm gate length GaN on SiC process. The measured output power is greater than 36dBm at peak PAE of 47% at 10 GHz. Gain flatness of ±0.1 dB around 9.2 dB is obtained at up to 25dBm input power. The PAE at 6 and 10 dB backoff is 41% and 31% respectively. For a 10-Mbps OQPSK signal, the ACPR at 10MHz is >30 dBc at maximum output power and >33 dBc at 10 dB backoff. This combination of linearity and efficiency at backoff represents state of the art for an X-band DPA. Limitations of supply modulation in DPAs to further extend output power back-off are highlighted in the discussion. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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