| Autor: |
Y.L. Cho, J.R. Kim, B. C. Rose, R.A. Stall, S.H. Lee, J.Y. Kim, D.S. Bang, M.A. McKee, J.H. Lee, Y.H. Inn |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials. |
| Popis: |
High-quality In/sub 0.5/Ga/sub 0.5/P and InGaAlP layers have been grown by low-pressure metalorganic vapor-phase epitaxy (MOVPE) in a vertical, high-speed rotating-disk reactor. The three most important areas of uniformity investigated were thickness, doping, and wavelength. Highly uniform films were obtained both on a single 50-mm-diameter wafer at the center of a 5-in-diameter wafer carrier and on three 50-mm-diameter GaAs wafers symmetrically placed on a 5-in-diameter carrier. The effects of temperature and V/III ratio on morphology and composition are discussed. Initial results on InGaAlP/InGaP DH lasers are presented. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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