Low-thermal budget flash light annealing for Al2O3surface passivation

Autor:	Daniel K. Simon, Thomas Henke, Ingo Dirnstorfer, Paul M. Jordan, Thomas Mikolajick, Franz P. G. Fengler, Johann W. Bartha
Rok vydání:	2015
Předmět:	Atomic layer deposition Passivation Annealing (metallurgy) Chemistry Fixed charge Thermal Trap density Analytical chemistry General Materials Science Plasma Condensed Matter Physics Flash light
Zdroj:	physica status solidi (RRL) - Rapid Research Letters. 9:631-635
ISSN:	1862-6254
Popis:	This value is achieved due to a very low interface trap density of below 1010 eV–1 cm–2 and a fixed charge density of (2–3) × 1012 cm–2. In contrast, plasma ALD-grown Al2O3 layers only reach carrier lifetimes of about 1 ms. This is mainly caused by a more than 10 times higher density of interface traps, and thus, inferior chemical passivation. The strong influence of the deposition parameters is explained by the limitation of hydrogen transport in Al2O3 during low-thermal budget annealing. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9fbb042ade8c2f0eaf8e3f180d36ccb6 https://doi.org/10.1002/pssr.201510306 Zobrazit plný text záznamu Plný text