Novel dielectrics for gate oxides and surface passivation on GaN
| Autor: | Soohwan Jang, Stephen J. Pearton, Fan Ren, C. R. Abernathy, A. H. Onstine, D. Stodilka, Timothy J. Anderson, Brent P. Gila, Andrew M. Herrero, M. Hlad, K. K. Allums, G. T. Thaler, A. Gerger, B. S. Kang |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Passivation business.industry Aluminium nitride Oxide Gallium nitride Dielectric High-electron-mobility transistor Nitride Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Gate oxide Materials Chemistry Electronic engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 50:1016-1023 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2006.04.001 |
| Popis: | In this paper, the authors report the nitride surface preparation and growth of these crystalline oxide dielectrics, efforts to improve the oxide/nitride interface properties by reducing the lattice mismatch and accelerated aging effects for these dielectrics on the nitride semiconductors. The authors review progress in obtaining low interface state densities and reducing current collapse with these dielectrics on GaN and examine the thermal stability and compatibility with processing schemes for HEMTs |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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