| Autor: |
T. Komizo, Amy E. Zweber, I. Yoshida, Linda K. Sundberg, T. Senna, R. Sooriyakumaran, Luisa D. Bozano, M. Tanabe, Martha I. Sanchez, Daniel P. Sanders |
| Rok vydání: |
2013 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
Resist materials rely on solubility differences between the exposed and unexposed areas to create the desired image. Most negative-tone resists achieve the solubility difference by crosslinking the exposed area causing it to be insoluble in developer. The negative tone resist studied here is a high sensitivity negativetone resist that relies on polarity switching, similar to a positive-tone mechanism, but where the exposed area is insoluble in aqueous developer resulting in a negative-tone image. During mask evaluation for 14nm optical technology applications of the studied non-cross linking (polarity switching) resist, 1 - 5 μm size blob-like defects were found in large numbers under certain exposure conditions. This paper will describe the process and methodologies used to investigate these blob defects. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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