Controlled growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of sapphire substrate

Autor:	Qi-Kun Xue, M. J. Ying, Hao Zheng, Yong Wang, Zhaoquan Zeng, Ze Zhang, Xiaolong Du, Zengxia Mei, Jin-Feng Jia
Rok vydání:	2004
Předmět:	Materials science Chemical engineering Inorganic chemistry Sapphire Wide-bandgap semiconductor General Physics and Astronomy Crystal growth Substrate (electronics) Thin film Nitride Epitaxy Molecular beam epitaxy
Zdroj:	Journal of Applied Physics. 96:7108-7111
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1812362
Popis:	Oxygen radicals pregrowth treatment and surface nitridation were used to eliminate Zn-polar inversion domains and control the growth of single-domain O-polar ZnO film on sapphire (0001) substrate by rf plasma-assisted molecular beam epitaxy. We found that the formation of oxygen-terminated sapphire surface prior to nitridation is crucial for achieving the anion polarity in subsequent AlN and ZnO layers, as demonstrated by formation of the 3×3 surface reconstruction during ZnO growth and ex situ polarity determination. This method, in general, can be applied to growth of other polar films, such as II-VI oxides and III-V nitrides, on sapphire (0001) substrates.
Databáze:	OpenAIRE
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