Enhancement of photoluminescence by microdisk formation from Si/Ge/Si single quantum wells
| Autor: | JangHyeon Seok, Hea Young Kim, JaeYon Kim, Ja-Yong Koo, Young-Kyu Hong, Suk-Ho Choi, Jung Nam Kim |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
Photoluminescence Physics and Astronomy (miscellaneous) Silicon Phonon business.industry Exciton Physics::Optics chemistry.chemical_element Germanium Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Epitaxy Condensed Matter::Materials Science chemistry Impurity Optoelectronics business Quantum well |
| Zdroj: | Applied Physics Letters. 80:2520-2522 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.1468918 |
| Popis: | A significant enhancement of photoluminescence (PL) intensity is observed in microdisks of 0.5 and 1 μm diam, which have been fabricated from Si/Ge/Si single quantum wells (SQWs) grown by molecular-beam epitaxy. The three major PL peaks found at 0.972, 0.957, and 0.920 eV are identified as a no-phonon transition of localized exciton, associated transverse-acoustical, and transverse-optical phonon replicas in Si, respectively. It is suggested that the formation of microdisks from the Si/Ge/Si SQWs enhances the intrinsic PL transitions significantly by suppressing the impurity-related ones. |
| Databáze: | OpenAIRE |
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