Switching properties of Pb(Nb, Zr, Ti)O3 capacitors using SrRuO3 electrodes

Autor:	Sanjeev Aggarwal, B. Nagaraj, J. T. Evans, G. Velasquez, C. L. Canedy, R. Ramesh, L. Boyer, I. G. Jenkins, C. J. Kerr
Rok vydání:	1999
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Ferroelectricity Ferroelectric capacitor law.invention Capacitor Film capacitor law Electrode Optoelectronics Crystallite Thin film Polarization (electrochemistry) business
Zdroj:	Applied Physics Letters. 75:1787-1789
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.124820
Popis:	We report on ferroelectric properties of polycrystalline sol-gel derived Pb(Nb, Zr, Ti)O3 (PNZT) thin films with SrRuO3 (SRO) electrodes. The processing temperature of the bottom electrode was varied between 550 and 850 °C. The polarization of the ferroelectric capacitors was dependent on the processing temperature of the bottom electrode. The capacitors exhibit low switching fields (40 kV/cm), high resistivity (1011 Ω cm at 3 V) and high remanent polarization values (19 μC/cm2 at 3 V), desirable properties for high-density ferroelectric memories. The activation field for these capacitors was measured to be ∼350 kV/cm and the polarization values exhibited a shallow dependence on the pulse width from 1 s to 1 μs. Fatigue, logic state retention, and dynamic imprint tests indicate robust capacitors from a memory viewpoint.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9f9a3127d402e4601e78569afa12e62a https://doi.org/10.1063/1.124820 Zobrazit plný text záznamu