Enhanced silicon nitride etching in the presence of F atoms: Quantum chemistry simulation
| Autor: | A. S. Smirnov, Yuri Barsukov, Vladimir Volynets, Nikolai A. Andrianov, Alexander V. Tulub, A. A. Kobelev |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Quantum chemistry Surfaces Coatings and Films chemistry.chemical_compound Silicon nitride chemistry Etching (microfabrication) 0103 physical sciences Cluster (physics) Fluorine Physical chemistry Density functional theory Dry etching 0210 nano-technology Selectivity |
| Zdroj: | Journal of Vacuum Science & Technology A. 36:061301 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.5044647 |
| Popis: | Dry etching of silicon nitride (SiN) is a challenging process in the semiconductor industry and requires high etch selectivity. Fluorine containing chemistry is widely used to etch silicon based materials, and one of the methods to increase the etch selectivity is to use reactants enhancing SiN etching in the presence of atomic fluorine. In this paper, quantum chemistry simulations have been carried out using the density functional theory method [B3LYP, 6-31 + G(d,p)] in order to determine such reactants. These simulations are based on the assumption that such reactants, for example, NO, can increase SiN etch rate via interacting with F–N bonds of the modified SiNFx surface. Silicon nitride cluster with F–N bonds is used here as a model of the modified SiNFx surface. Several new reactants (HF, Cl, H, Br, and FNO) enhancing SiN etch rate have been found by these simulations. The fact that such species as NO, HF, and H atoms can enhance SiN etching explains qualitatively some previously published experimental data.Dry etching of silicon nitride (SiN) is a challenging process in the semiconductor industry and requires high etch selectivity. Fluorine containing chemistry is widely used to etch silicon based materials, and one of the methods to increase the etch selectivity is to use reactants enhancing SiN etching in the presence of atomic fluorine. In this paper, quantum chemistry simulations have been carried out using the density functional theory method [B3LYP, 6-31 + G(d,p)] in order to determine such reactants. These simulations are based on the assumption that such reactants, for example, NO, can increase SiN etch rate via interacting with F–N bonds of the modified SiNFx surface. Silicon nitride cluster with F–N bonds is used here as a model of the modified SiNFx surface. Several new reactants (HF, Cl, H, Br, and FNO) enhancing SiN etch rate have been found by these simulations. The fact that such species as NO, HF, and H atoms can enhance SiN etching explains qualitatively some previously published experiment... |
| Databáze: | OpenAIRE |
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