| Autor: |
P.J. Riemer, Barry K. Gilbert, E.S. Daniel, J.S. Humble, B.A. Randall, Jonathan Darrel Coker, J.F. Prairie |
| Rok vydání: |
2007 |
| Předmět: |
|
| Zdroj: |
2007 IEEE/MTT-S International Microwave Symposium. |
| ISSN: |
0149-645X |
| DOI: |
10.1109/mwsym.2007.380278 |
| Popis: |
We present the development of a Ka-band (28-33 GHz) power amplifier designed in a 200/250 GHz fT/fmax, SiGe BiCMOS technology (IBM 8HP). A 4-way microstrip-based power amplifier using on-chip Wilkinson power combiners is described. To our knowledge, this is the first demonstration of a Ka-band power amplifier in SiGe technology designed for integration into a single-chip transmit/receive (T/R) module. The power amplifier exhibits a -10 dB compression point (PlOdB) of 19.4 dBm and a -1 dB compression point (PldB) of 15.4 dBm. The maximum gain of the amplifier is 46.8 dB at 31.9 GHz with a -3 dB bandwidth of 4.7 GHz. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
