Antimonide semiconductor saturable absorber for passive mode locking of a 1.5-/spl mu/m Er : Yb : glass laser at 10 GHz
| Autor: | Emilio Gini, Ursula Keller, Silke Schön, O. Ostinelli, Rachel Grange, S.C. Zeller, Markus Haiml |
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| Rok vydání: | 2006 |
| Předmět: |
Ytterbium
Materials science business.industry chemistry.chemical_element Semiconductor device Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Pulsed laser deposition Semiconductor laser theory Gallium arsenide Erbium chemistry.chemical_compound Optics chemistry Mode-locking Antimonide Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Photonics Technology Letters. 18:805-807 |
| ISSN: | 1041-1135 |
| DOI: | 10.1109/lpt.2006.871846 |
| Popis: | We demonstrate the first antimonide (AlGaAsSb) semiconductor saturable absorber mirror (SESAM) for stable passive mode locking of an Er : Yb : glass laser at 10 GHz and a center wavelength of 1535 nm generating 4.7-ps pulses. The nearly resonant SESAM is InP-based, grown by metal-organic vapor phase epitaxy and optimized for high pulse repetition rates. We fully characterized the linear and nonlinear optical parameters: The saturation fluence is 80 /spl mu/J/cm/sup 2/, the modulation depth is 0.4% and the nonsaturable losses are 0.35%. A 1/e decay time of 95 ps is achieved after wet chemical etching of the 10-nm InP cap on top of the absorber. |
| Databáze: | OpenAIRE |
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