Interface state density at the contact of ferroelectric NaNO2and silicon
| Autor: | W. v. Münch, J. Schulz, P. Würfel, U. Thiemann, W. Ruppel, St. Koch |
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| Rok vydání: | 1989 |
| Předmět: |
chemistry.chemical_classification
Materials science Condensed matter physics Silicon Band gap chemistry.chemical_element Condensed Matter Physics Thermal conduction Space charge Ferroelectricity Electronic Optical and Magnetic Materials chemistry Depletion region Electrical resistivity and conductivity Inorganic compound |
| Zdroj: | Ferroelectrics. 99:87-100 |
| ISSN: | 1563-5112 0015-0193 |
| Popis: | A film of ferroelectric sodium nitrite is deposited directly on a p-implanted channel in a silicon substrate. The charge neutralizing the spontaneous polarisation of the NaNO2 is accommodated partly in a space charge layer in the Si, and partly in interface states at the NaNO2-Si boundary. Depending on the direction of the spontaneous polarisation, either hole accumulation, or depletion and even inversion, is observed in the p-channel. The measurement of the channel conductivity reveals the amount of space charge in the Si. Its modulation by an additional ac-voltage across the ferroelectric allows for the determination of the mobile charge and the charge in in'erface states. The density of these interface states is determined over the major part of the Si band gap, yielding a value of 2 · 1012(cm2eV) near the middle of the band gap, with values increasing toward the edges of conduction and valence band. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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