Two-dimensional impurity profiling with emission computed tomography techniques
| Autor: | C.E. Floyd, Ravi Subrahmanyan, S.H. Goodwin-Johansson, Hisham Z. Massoud |
|---|---|
| Rok vydání: | 1989 |
| Předmět: |
Materials science
medicine.diagnostic_test Silicon Doping Resolution (electron density) Impurity profiling chemistry.chemical_element Computer Graphics and Computer-Aided Design Sample (graphics) Computational physics chemistry Impurity medicine Electrical and Electronic Engineering Software Emission computed tomography |
| Zdroj: | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 8:323-335 |
| ISSN: | 0278-0070 |
| DOI: | 10.1109/43.29587 |
| Popis: | A technique for the determination of two-dimensional impurity profiles in silicon using methods for emission computed tomography is presented. Several one-dimensional impurity profiles obtained for different directions through the sample are used to reconstruct the two-dimensional profile. A simulation study of the experiment is described, and effects of various experimental and reconstruction parameters are discussed. Reconstructions of an area of 4 mu m*4 mu m from thirteen one-dimensional measurements, with a resolution of 1000 AA, are numerically possible. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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