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The detail DC and AC analysis of a proposed novel Indium Arsenide (InAs)/Silicon (Si) heterojunction-based dual-gate triple metal P-i-N tunneling graphene nanoribbon field effect transistor (DG-TM-TGNFET) has been reported in this chapter. The novel heterojunction-based TFET structure with ultra-thin graphene nanoribbon placed over silicon channel has produced better digital and analog/RF performance, by means of which the proposed device can be useful for high-frequency (Tera Hertz) applications. A thorough investigation of analog/RF performance parameters viz. transconductance (gm), overall gate capacitance (Cgg), gain bandwidth product (GBP) and cut-off frequency (ft) has been derived, simulated, and compared with conventional all silicon homojunction-based dual-gate TFET structures. All simulation work has been performed by Silvaco simulator. The cut-off frequency (ft) of DG-TM-TGNFET device has been observed as 0.349 THz which is suitable for high-frequency applications. |
