Importance of void-free Al-Si contacts to enable 21% efficient screen-printed n-type silicon solar cells using ion implantation
| Autor: | Jaffar Moideen Yacob Ali, Ankit Khanna, Vinodh Shanmugam, Thomas Mueller |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Silicon Dopant Annealing (metallurgy) business.industry digestive oral and skin physiology chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Ion implantation chemistry 0103 physical sciences Optoelectronics Wafer 0210 nano-technology business Boron Sheet resistance Common emitter |
| Zdroj: | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). |
| DOI: | 10.1109/pvsc.2018.8548299 |
| Popis: | In this paper n-type silicon wafer solar cells with a diffused boron rear emitter and an implanted phosphorus front surface field are investigated. The effect of annealing time on the implanted phosphorus surface was evaluated in this study in terms of the front surface field dopant profile and its impact on the solar cells’ electrical characteristics. A shallower front surface doping profile resulted in better short wavelength response. Additionally, the performance of two different Al pastes (with and without Si content in the paste) was compared. The better-performing Al-Si paste generates a homogeneous Al-p+ region under the contacts, which reduces the recombination at the contacts. By tailoring the phosphorus front surface field profiles and by minimising the recombination during the rear Al contact formation, efficiencies of up to 21% on large area 244 cm2 n-type wafers were achieved so far. |
| Databáze: | OpenAIRE |
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