High-Power, High-Linearity, Heterogeneously Integrated III-V on Si MZI Modulators for RF Photonics Systems
| Autor: | John E. Bowers, Chong Zhang, Jacob B. Khurgin, Christopher D. Morton, Paul A. Morton, Jon D. Peters, Michael J. Morton |
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| Rok vydání: | 2019 |
| Předmět: |
Silicon photonics
Materials science Spurious-free dynamic range business.industry Dynamic range Lithium niobate Linearity Optical power Atomic and Molecular Physics and Optics chemistry.chemical_compound chemistry Optoelectronics Electrical and Electronic Engineering Photonics business Phase modulation |
| Zdroj: | IEEE Photonics Journal. :1-1 |
| ISSN: | 1943-0647 |
| Popis: | In this paper, heterogeneously integrated III–V on silicon (III-V/Si) Mach–Zehnder interferometer (MZI) modulators providing record results for both linearity and high-power operation are described. Devices include hybrid III–V/Si phase modulation sections in a Si MZI, and with a single-drive push-pull operation provide a spurious-free dynamic range (SFDR) as high as 112 dB·Hz2/3 at 10 GHz, comparable to commercial lithium niobate modulators. Optical power levels up to 100 mW into the modulator provide no degradation in device linearity, with modulators demonstrating typical SFDRs of 110 dB·Hz2/3. These III–V/Si MZI modulators, using a 500-nm ‘‘thick’’ Si layer for III–V integration, demonstrate applicability for high-SFDR analog fiber-optic links without need for an erbium-doped fiber amplifier. |
| Databáze: | OpenAIRE |
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