In Situ Conductance of Fe/Si and Fe/Ge Multilayers

Autor:	P. Chomiuk, M. Błaszyk, M. Wróblewski, T. Luciński, B. Susła
Rok vydání:	2008
Předmět:	In situ Materials science Atomic force microscopy Analytical chemistry General Physics and Astronomy Conductance Sputter deposition Layer thickness Deposition (law)
Zdroj:	Acta Physica Polonica A. 113:657-662
ISSN:	1898-794X 0587-4246
DOI:	10.12693/aphyspola.113.657
Popis:	In this paper we study Fe/Si and Fe/Ge multilayers prepared at room temperature by magnetron sputtering. In situ conductance measurements reveal the formation of interfacial Fe–Si and Fe–Ge mixtures. During the Fe deposition a modification of growth mode is noticed. Deposition of Si (or Ge) onto Fe leads to the reduction of the Fe layer thickness due to interdiffusion, and Fe–Si (or Fe–Ge) structures appear. Above about 1.3 nm of deposited Si (1.5 nm of Ge) nominally pure Si (Ge) starts growing. Surface topography of the Fe/Si multilayers is studied by atomic force microscopy.
Databáze:	OpenAIRE
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