Radiation-induced structure modification in monocrystalline silicon under high-energy C6+ irradiation

Autor:	M. A. Kozodaev, A. A. Golubev, V. I. Turtikov, T. S. Balashov, A. D. Fertman, S. V. Rogozhkin, A. G. Zaluzhnyi
Rok vydání:	2006
Předmět:	Monocrystalline silicon Crystallography X-ray photoelectron spectroscopy Silicon Photoemission spectroscopy Chemistry X-ray crystallography Analytical chemistry chemistry.chemical_element Irradiation Single crystal Amorphous solid
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.677148
Popis:	This paper concerns surface morphology and structural modification in silicon after 1.2 GeV C 6+ irradiation. A number of experimental techniques was used, including atomic force microscopy, x-ray photoelectron spectroscopy and x-ray diffraction studies. The formation of nanometer-sized hillocks on the surface was revealed. In the bulk of parallel-irradiated specimens amorphous regions formation was discovered.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9f4757ece2051b83f3654e4a72150ddc https://doi.org/10.1117/12.677148 Zobrazit plný text záznamu